Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Entirely of metal except for feedthrough
Reexamination Certificate
2007-07-17
2007-07-17
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Entirely of metal except for feedthrough
C257S711000, C257S787000, C257SE23128, C257SE23059
Reexamination Certificate
active
11174268
ABSTRACT:
A packaging structure (10) is provided having a hermetic sealed cavity for microelectronic applications. The packaging structure (10) comprises first and second packaging layers (12, 28) forming a cavity. Two liquid crystal polymer (LCP) layers (16, 22) are formed between and hermetically seal the first and second packaging layers (12, 28). First and second conductive strips (18, 20) are formed between the LCP layers (16, 22) and extend into the cavity. An electronic device (24) is positioned within the cavity and is coupled to the first and second conductive strips (18, 20).
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Rogers Corporation, Rogers R/flex® 3000 Liquid Crystalline Polymer Circuit Material R/flex® 3850 Double Clad Laminate, Data Sheet RF1.3850, 2003 Publication #14-021, Advanced Circuit Materials Division, Chandler, AZ.
Bosco Bruce A.
Emrick Rudy M.
Franson Steven J.
Holmes John E.
Rockwell Stephen K.
Fahmy Wael
Motorola Inc.
Trinh (Vikki) Hoa B.
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