1984-11-29
1988-05-03
Larkins, William D.
357 16, H01L 2980
Patent
active
047423790
ABSTRACT:
A compound semiconductor device comprises an enhancement-mode transistor and a depletion-mode transistor, each of which has a heterojunction and utilizes a two-dimensional electron gas. The method of producing the device comprises the steps of: forming an undoped GaAs channel layer on a semi-insulating GaAs substrate; forming an N-type AlGaAs electron-supply layer so as to form the heterojunction; forming an N-type GaAs layer; forming an AlGaAs layer; selectively etching the AlGaAs layer to form a recess; performing an etching treatment using an etchant which can etch rapidly GaAs and etch slowly AlGaAs to form simultaneously grooves for gate electrodes of the enhancement-mode transistor and the depletion-mode transistor, the bottoms of the grooves being in the N-type AlGaAs layer and the distance between the bottoms being equal to the thickness of the AlGaAs layer; and forming simultaneously the gate electrodes in the grooves.
REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4635343 (1987-01-01), Kuroda
Hikosaka et al., Selective Dry Etching of AlGaAs-GaAs Heterojunction, Jap. Journal Appl. Phy, vol. 20, No. 11, Nov. 1981, pp. L847-L850.
"(Invited) MBE-Grown GaAs/N-AlGaAs Heterostructures and Their Application to High Electron Mobility Transistors", Japanese Journal of Applied Physics, vol. 21 (1982), Supplement 21-1, pp. 161-168.
Ishiwari Hidetoshi
Kosemura Kinjiro
Kuroda Shigeru
Yamamoto Sumio
Yamashita Yoshimi
Fujitsu Limited
Larkins William D.
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