Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-11-24
1995-02-28
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257191, 257194, H01L 31072
Patent
active
053939905
ABSTRACT:
A high electron mobility transistor includes a donor layer of aluminum gallium arsenide (AlGaAs) for forming a two-dimensional electron gas (2DEG) in a proximate buffer layer of gallium arsenide. The donor layer has a composition profile including a relatively high concentration of aluminum over a first thickness portion proximate the buffer layer, a low and constant concentration of aluminum over a second thickness portion distal from the buffer layer and a graded concentration of aluminum in a third thickness portion of the donor layer between the first and second thickness portions, transitioning between the high and the low concentrations of aluminum. The donor layer has a doping profile including a high level doping spike in the first thickness portion and a low doping level over the second and third thickness portions.
REFERENCES:
patent: 4593301 (1986-06-01), Inata et al.
patent: 4600932 (1986-07-01), Norris
patent: 4833508 (1989-05-01), Ishikawa et al.
Siei, High electron mobility transistor structure, Siemens AG Sep. 25, 1987-US-101107, No.-SR Pub R(DE ES FRGGIT), Derwent Publications Ltd.
Patent Abstracts of Japan, vol. 12, No. 150 (E-606)(2997), 10 May 1988 & JP A-62264672 (Fujitsu) Nov. 17, 1987.
Patent Abstracts of Japan, vol. 8, No. 115 (E-247)(1552), 29 May 1984; & JP A-5928383 (Nippon Denki) 15 Feb. 1984.
Journal of Applied Physics, vol. 63, No. 5, 1 Mar. 1988, pp. 1541-1548, Woodbury, N.Y., US; J. R. Kirtley et al.: "Noise spectroscopy of deep level (DX) centers in GaAs-AlxGal-xAs heterostructures."
European Search Report corresponding to European Application No. EP 90 10 6417.
Ahmed Adel A.
Hille Rolf
Potter Roy
Siemens Corporate Research Inc.
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