HEMT-HBT cascode distributed amplifier

Details HEMT-HBT cascode distributed amplifier HEMT-HBT cascode distributed amplifier

1997-10-21

1999-07-06

Pascal, Robert

Amplifiers

With distributed parameter-type coupling means

Distributed amplifier

330277, 330295, H03F 360, H03F 316, H03F 368

Patent

active

059202300

ABSTRACT:
A distributed amplifier formed from high electron mobility transistors (HEMTs) and a heterojunction bipolar transistor (HBT) configured in a cascode arrangement in which a common source FET, such as a high electron mobility transistors (HEMTs), is used to drive a heterojunction bipolar transistor (HBT) in a common base configuration which provides increased RF output power relative to known all-HEMT distributed amplifiers.

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