Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon
Patent
1993-04-28
1994-12-20
Santiago, Amalia L.
Chemistry of inorganic compounds
Silicon or compound thereof
Elemental silicon
219686, 219687, 422141, 422142, 422146, 422199, 423350, 427213, C01B 33021, C01B 33023, C01B 3303
Patent
active
053744136
ABSTRACT:
An improved method is provided for the deposition of high-purity silicon on silicon particles from silicon source gases in a fluidized bed reactor which is divided into a heating zone and a reaction zone by a partition. Silicon particles in the heating zone are fluidized by a carrier gas such as hydrogen and are heated by microwaves. On the other hand, the reaction zone for the deposition of silicon, through which reaction gases including the silicon source pass, is heated by particle mixing between the reaction zone and the upper section of the heating zone. Subsequently, a desired reaction temperature at the reaction zone is maintained stable without deteriorating the microwave heating of the heating zone.
REFERENCES:
patent: 4338283 (1982-07-01), Sakamoto et al.
patent: 4786477 (1988-11-01), Yoon et al.
patent: 4992245 (1991-02-01), Van Slooten et al.
patent: 5073349 (1991-12-01), Herbst et al.
Jeon Jong Y.
Kim Hee Y.
Kwon Dae H.
Lee Jae S.
Lee Kang M.
Korea Research Institute of Chemical Technology
Santiago Amalia L.
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