Heating method of semiconductor wafer

Details Heating method of semiconductor wafer Heating method of semiconductor wafer

1984-02-22

1986-02-18

Albritton, C. L.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219339, 219347, 148 15, F24H 300

Patent

active

045714860

ABSTRACT:
A method for heating a semiconductor wafer having a first region to be heated and a second region requiring no heating thereof, which method comprises forming a film over at least one of the first and second regions so as to make the reflectivity of the surface of the first region smaller than the reflectivity of the surface of the second region, and then exposing the semiconductor wafer to a flash of light to heat same. The above method permits selectively heating the region which is required to be heated, and, at the same time, to avoid any overheating of the region where no heating is required. The above heating method is particularly effective for annealing a semiconductor wafer which has a large surface area.

REFERENCES:
patent: 4001047 (1977-01-01), Boah
patent: 4135027 (1979-01-01), Anthony et al.

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