Heating method of semiconductor wafer

Details Heating method of semiconductor wafer Heating method of semiconductor wafer

1984-02-22

1985-06-25

Newsome, John H.

Coating processes

Electrical product produced

Welding electrode

427 55, B05D 306

Patent

active

045253803

ABSTRACT:
A method for heating a semiconductor wafer which may have a first region to be heated and a second region requiring no heating thereof, which method comprises forming a film on a surface of the semiconductor wafer so as to make the reflectivity of the whole surface of the wafer uniform, and then exposing the semiconductor wafer to a flash of light to heat same. The above method permits to heat the whole surface of the wafer at a uniform temperature thereby heating a region of the wafer which is required to be heated, and, at the same time, avoiding any overheating of another region of the wafer where no heating is required. The above heating method is effective for annealing a semiconductor wafer which has large surface area.

REFERENCES:
patent: 4431459 (1984-02-01), Teng

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