Coating processes – Electrical product produced – Metal coating
Patent
1988-11-04
1989-11-21
Pellinen, A. D.
Coating processes
Electrical product produced
Metal coating
219543, 437187, H01L 2102
Patent
active
048822035
ABSTRACT:
A process for fabricating a heating element comprising the following steps: surface protecting a silicon object by forming a protective layer by means of thermal oxidation, CVD or suitable alternative method; selectively etching away said protective layer so as to form a pattern to permit the formation of wire-like regions for a desired heater configuration; exposing the silicon object to halogenated tungsten gas at a reaction temperature of between 250.degree. and 500.degree. centigrade so as to chemically reduce a layer of tungsten onto the exposed silicon; and then coating the composite structure with a corrosion and oxidation resistant layer.
REFERENCES:
patent: 3351438 (1967-11-01), Milner et al.
patent: 4650696 (1987-03-01), Raby
patent: 4745089 (1988-05-01), Orbin
"Selective Low Pressure Chemical Vapor Deposition of Tungsten" by Broadbent and Raimiller, Solid State Science and Technology, Jun. 1984, pp. 1427-1433.
"Tungsten CVD: Application to Submicron VLSIC'S" by Itoh, et al, Solid State Technology, Nov. 1987, pp. 83-87.
"Progress in LPCVD Tungsten For Advanced Micro-electronic, Applications" by Blewer, Solid State Technology, Nov. 1986, pp. 117-126.
"Tungsten Nucleation on Thermal Oxide During LPCVD of Tungsten by the Hydrogen Reduction of Tungsten Hexafloride" by McConica and Cooper, Solid State Science and Technology, vol. 135, No. 4, Apr. 1988, pp. 1003-1008.
"CVD Tungsten-A Solution for the Poor Step Coverage and High Contact Resistance of Aluminum" by Brors, et al, Solid State Technology, Apr. 1984, pp. 313-314.
"Growth of Selective Tungsten on Self-Aligned Ti and Ttni Silicides by Low Pressure Chemical Vapor Deposition" by Broadbent, Morgan, et al, Solid State Technology, Aug. 1986, vol. 133, No. 8, pp. 1715-1721.
CVD Systems & Services
Fuller Leon K.
Pellinen A. D.
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