Heating chamber and method of heating a wafer

Electric heating – Heating devices – Combined with container – enclosure – or support for material...

Reexamination Certificate

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Details

C219S405000, C219S411000, C392S416000, C392S418000, C118S724000, C118S725000, C118S050100

Reexamination Certificate

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10115111

ABSTRACT:
A heating chamber which can be used during a reflow process to form a metal wiring having a multi-layered writing structure and a method of heating a wafer using the same, are provided. The heating chamber is movable upward and downward between the upper process position and the lower loading position, and includes a pedestal having a supporting surface for supporting a wafer, a cover installed above the pedestal to form a processing area together with the supporting surface when the pedestal is placed in its raised process position and a heating unit for heating the waver. In the method of heating the wafer, the temperature in the processing area is maintained suitable for heating the wafer before the wafer is loaded onto the supporting surface, the wafer is loaded onto the supporting surface and the loaded wafer is heating in the processing area.

REFERENCES:
patent: 5817178 (1998-10-01), Mita et al.
patent: 5935334 (1999-08-01), Fong et al.
patent: 6110322 (2000-08-01), Teoh et al.
patent: 6231674 (2001-05-01), Chen et al.
patent: 6303906 (2001-10-01), Yoo
patent: 6414280 (2002-07-01), Nishitani et al.
patent: 6462310 (2002-10-01), Ratcliff et al.
patent: 101265690 (1998-05-01), None
English language of Abstract for Japanese Patent Publication No. JP 10125690, Published May 15, 1998.

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