Heater for manufacturing a crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Reexamination Certificate

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Details

C117S218000, C117S222000, C117S900000

Reexamination Certificate

active

10503721

ABSTRACT:
The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.

REFERENCES:
patent: 5766347 (1998-06-01), Shimomura et al.
patent: 5968266 (1999-10-01), Iino et al.
patent: 6093913 (2000-07-01), Schrenker et al.
patent: 6285011 (2001-09-01), Cherko
patent: A 2-172885 (1990-07-01), None
patent: B2 7-72116 (1995-08-01), None
patent: A 9-208371 (1997-08-01), None
patent: A 9-235178 (1997-09-01), None
patent: A 10-167876 (1998-06-01), None
patent: A 11-139895 (1999-05-01), None
patent: A 11-199371 (1999-07-01), None
patent: A 2001-39792 (2001-02-01), None

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