Heat treatment process for preventing slips in semiconductor waf

Details Heat treatment process for preventing slips in semiconductor waf Heat treatment process for preventing slips in semiconductor waf

1995-10-27

1998-07-07

Kamen, Noah P.

Heating

Processes of heating or heater operation

Subjecting work to diverse treatments or graduated temperatures

432 6, 432 12, F27B 912

Patent

active

057758891

ABSTRACT:
A heat treatment apparatus comprising a reaction vessel located in a vertical furnace, and a ladder boat for mounting a plurality of semiconductor wafers one above another in parallel with each other. A vertical mounting pitch of mounting the wafers on the ladder boat is set at, e.g., 40 mm. When a treatment temperature is 1000.degree. C., intra-surface temperature differences of the wafers, objects to be treated, can be suppressed to 10.degree. C. at the time of passing 900.degree. C. even when 600.degree. C. is raised to 100.degree. C. at a 100.degree. C./min rate, whereby no slip occurs in large-diameter semiconductor wafers of an above 250 mm diameter even with high temperature increases at high rates in heat treatments, as of oxidation, diffusion, etc.

REFERENCES:
patent: 5297956 (1994-03-01), Yamabe et al.

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