Heat treatment process

Details Heat treatment process Heat treatment process

1995-05-15

1997-11-18

Kamen, Noah P.

Heating

Processes of heating or heater operation

Treating an article, container, batch or body as a unit

432253, F27D 1300

Patent

active

056881169

ABSTRACT:
A number of semiconductor wafers are held in a ladder boat at, e.g., a 3/16 inch arrangement pitch of wafers W, and the ladder boat is loaded into a vertical heat treatment furnace. Then an interior of the heat treatment furnace is heated up to 900.degree. C. at a high temperature raising rate of, e.g., 30.degree. C./minute. Subsequently the interior is heated in steps at low temperature raising rates, e.g., at below 14.degree. C./minute up to a temperature region of, e.g., 980.degree. C. and at below 5.degree. C./minute up to a heating temperature of 1100.degree. C. These temperature raising rates are determined, based on results given by observation of presence and absence of slips in the wafers W heat-treated in various temperature raising patterns for different wafer arrangement pitches, so that the wafers can be heat-treated effectively without occurrence of slips. Widening said arrangement pitch to 3/8 inches allows higher temperature raising rates to be set.

REFERENCES:
patent: 5431561 (1995-07-01), Yamabe et al.
Japanese Patent Laid-Open Publication, Kokai, No. 5-6894 published on Jan. 1993.
English abstract of Japanese Patent Laid-Open Publication, Kokai, No. 5-6894.

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