Heat treatment of Si single crystal

Details Heat treatment of Si single crystal Heat treatment of Si single crystal

1997-08-22

1998-11-10

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

438 14, 438795, H01L 21322

Patent

active

058343229

ABSTRACT:
The method of this invention for heat treatment of a Si single crystal grown by the Czochralski method at a speed of pull of not less than 0.8 mm/min., characterized by heat-treating at a temperature in the range of from 1,150.degree. C. to 1,280.degree. C. a wafer cut out of the Si single crystal thereby producing a Si wafer excellent in oxide film dielectric breakdown voltage characteristic due to elimination of crystal defects. Consequently, this invention ensures production of LSI in a high yield.

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