Heat treatment method

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

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Details

C427S255280, C118S725000

Reexamination Certificate

active

07118780

ABSTRACT:
A method of manufacturing a semiconductor device comprising: supplying a gas from an upstream side of a reaction chamber; heating the gas by using heat treatment means located on the upstream of the reaction chamber, and making the gas flow downstream; and heating a substrate to be processed arranged on a downstream side of the reaction chamber while circulating the gas from the downstream side of the reaction chamber to the upstream side.

REFERENCES:
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patent: 5378283 (1995-01-01), Ushikawa
patent: 5551984 (1996-09-01), Tanahashi
patent: 5562383 (1996-10-01), Iwai et al.
patent: 5810934 (1998-09-01), Lord et al.
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patent: 6187379 (2001-02-01), Lackey
patent: 6616898 (2003-09-01), Hara et al.
patent: 2002/0197785 (2002-12-01), Yamazaki et al.
patent: 6-151414 (1994-05-01), None
patent: 10-055951 (1998-02-01), None
patent: 2000-105081 (2000-04-01), None
patent: 2001-267264 (2001-09-01), None
English abstract re Japanese Patent Application No. JP 6-151414 published May 31, 1994.
English abstract re Japanese Patent Application No. JP 10-055951 published Feb. 24, 1998.
English abstract re Japanese Patent Application No. JP 2000-105081 published Apr. 11, 2000.

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