Coating apparatus – Gas or vapor deposition – With treating means
Patent
1990-12-28
1992-11-17
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118715, C23C 1646
Patent
active
051640120
ABSTRACT:
A heat treatment apparatus having a reaction furnace including a reaction chamber for accommodating a plurality of objects, major surfaces of which are faced to each other at intervals, and a heater provided outside the reaction chamber, gas supply tube for introducing a gas into the reaction chamber therethrough, flow-directing unit for directing gas flow in a first direction substantially parallel to the surfaces of the objects, gas exhaust tube for exhausting a gas outside the reaction chamber, and moving unit for moving the gas flow in a second direction different from the first direction. A method of forming thin films on objects of heat treatment having the steps of causing a first gas flow introduced from a first gas supply tube and a second gas flow introduced from a second gas supply tube to meet each other, thereby producing a third gas flow flowing in a direction substantially parallel to the surfaces of the objects, major surfaces of which are faced to each other at intervals, disposed in a reaction chamber, and controlling flow rate of the first and second gas flows, thereby moving the position of the third gas flow in a second direction different from the first direction.
REFERENCES:
patent: 4108106 (1978-08-01), Dozier
patent: 4593644 (1986-06-01), Hanak
patent: 4992301 (1991-02-01), Shishiguchi
Bueker Richard
Tokyo Electron Limited
LandOfFree
Heat treatment apparatus and method of forming a thin film using does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Heat treatment apparatus and method of forming a thin film using, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heat treatment apparatus and method of forming a thin film using will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1169043