Heat-treating method for semiconductor components

Details Heat-treating method for semiconductor components Heat-treating method for semiconductor components

1981-01-16

1983-01-25

Kellogg, Arthur D.

Glass manufacturing

Processes

Operating under inert or reducing conditions

65110, 65111, 65117, 148175, C03B 3200

Patent

active

043701582

ABSTRACT:
An improved method for the heat treatment of quartz-glass tubes at temperatures above 1200.degree. C. is disclosed wherein a pressure is maintained within the glass tube which is 3 to 110 mm Hg higher than the pressure on the external surface of the quartz tube over the heated area of the tube for at least the length of time that a temperature of 1200.degree. C. is exceeded. The process is particularly useful for the treatment of quartz-glass tubes within which silicon wafers are disposed for the purpose of diffusing doping agent into silicon wafers or of depositing doped epitaxial layers on silicon wafers.

REFERENCES:
patent: 2711055 (1955-06-01), Majkrazak et al.
patent: 3445300 (1969-05-01), Sirtl
patent: 3490961 (1970-01-01), Frieser et al.
patent: 3682699 (1972-08-01), Koga et al.

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