Electric heating – Heating devices – With power supply and voltage or current regulation or...
Patent
1998-09-11
2000-06-06
Paschall, Mark
Electric heating
Heating devices
With power supply and voltage or current regulation or...
505494, 392416, 374126, 374128, H05B 102
Patent
active
060721642
DESCRIPTION:
BRIEF SUMMARY
CROSS-REFERENCE TO RELATED APPLICATION
This application claims priority based on PCT Application Ser. No. PCT/JP97/00734, filed Mar. 10, 1997 identifying the United States as an elected country, which in turn claims priority based on Japanese Patent Application No. 8-83327, filed Mar. 12, 1996.
1. Field of the Invention
The present invention relates to a heat-treating method and a radiant heating device by which an object to be heat-treated can be heat-treated at an actually desired temperature at the time of heat-treating the object with a radiant heating device, particularly, at the time of performing various kinds of heat treatments, growing a CVD film, performing epitaxial growth, or performing like processes on a semiconductor silicon single-crystal substrate having a low resistivity.
2. Background Art
Semiconductor devices are manufactured by performing various kinds of heat treatments on, for example, silicon single-crystal substrates, compound semiconductor single-crystal substrates, or like substrates which serve as objects to be heat-treated. In order to subject these objects to various kinds of heat treatments, CVD film growth, epitaxial growth, or like processes, a radiant heating device is often used.
FIG. 1 shows a schematic configuration of a conventionally used radiant heating device. A radiant heating device 1 is constituted such that a reaction vessel 8 formed of, for example, transparent quartz accommodates an object 2 to be heat-treated, such as a semiconductor substrate or the like, and the object 2 is heated through irradiation with energy emitted in the form of radiant light from a radiant heating unit 3 disposed outside the reaction vessel 8. The radiant heating unit is composed of, for example, radiant heating lamps 9, such as halogen lamps, infrared lamps, or like lamps, and mirrors 10 for enhancing directivity of radiant light.
In order to detect the temperature of the object, a thermocouple or a radiation thermometer is used. Since use of the radiation thermometer enables temperature measurement from outside the reaction vessel, the radiation thermometer is convenient. The radiation thermometer is composed of a detector 5 and a temperature converter 6. The detector 5 detects radiant light emitted from the object and sends the intensity of the detected radiant light to the temperature converter 6, which converts the received intensity to temperature. The thus-obtained temperature (in actuality, a voltage or current value corresponding to the temperature) is outputted to a temperature controller 7. Power fed to the radiant heating lamps 9 is regulated such that the temperature detected with the radiation thermometer becomes equal to a previously inputted set temperature (a temperature previously set and inputted to the temperature controller), thereby maintaining the object 2 at a desired temperature.
According to an example method for heat-treating the object through use of the thus-constituted radiant heating device, while a reactive gas 4 consisting of a carrier gas and a reactive material is made to flow on the front surface side of a semiconductor substrate 2, the semiconductor substrate 2 is heated to a desired temperature; for example, 800-1200.degree. C., with the radiant heating unit 3. Through chemical reaction of the reactive gas 4, a desired thin film can be grown on the surface of the substrate 2.
In this case, needless to say, if the temperature of the object to be heat-treated is not actually a desired temperature, various desired quality characteristics of the produced thin film, such as thickness, electrical characteristics, crystalline properties, etc., will fail to be attained. Also, the properties of the object affect an actually reached temperature of the object, causing the reached temperature to deviate from a set temperature. Such a temperature deviation comes out in the form of variations in quality characteristics of the produced thin film. This problem is not limited to the above-mentioned growth of a thin film, but is commonly involved in heat treatmen
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Habuka Hitoshi
Sakai Tomoyuki
Tate Naoto
Toda Naohisa
Paschall Mark
Shin-Estu Handotai Co., Ltd.
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