Heat treating apparatuses for semiconductors and high purity sil

Details Heat treating apparatuses for semiconductors and high purity sil Heat treating apparatuses for semiconductors and high purity sil

1991-11-20

1993-01-12

Group, Karl

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

264 60, C04B 3556

Patent

active

051790491

ABSTRACT:
High purity silicon carbide parts for a heat treating apparatuses for semiconductors; composed mainly of .alpha.-type silicon carbide and silicon; characterized in that a particle sizes of the .alpha.-type silicon carbide crystals composing the high purity silicon carbide parts are not larger than 44 .mu.m; a weight mean particle size of the .alpha.-type silicon carbide crystals is in a range from 2 to 25 .mu.m; high purity silicon is filled up among the particles of the .alpha.-type silicon carbide crystals; and a content of iron as an impurity element contained in the high purity silicon carbide parts is not larger than 5 ppm.

REFERENCES:
patent: 4753763 (1988-06-01), Tanaga et al.
patent: 4836965 (1989-06-01), Hayashi et al.
Chemical Abstracts, vol. 11, No. 16, Oct. 16, 1989, 139373C, H. Watanabe, et al., "Manufacture of Silicon Carbide Jig for Diffusion Furnace for Semiconductor Preparation".
"Determination of Impurities in a High Purity Silicon Carbide by Pressurized Decomposition-ICP Emission Spectral Analysis", Proceedings of the 51st Symposium of the Japan Society for Analytical Chemistry, May 14, 1990, Kageyama, et al.

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