Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-09-19
2006-09-19
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51018
Reexamination Certificate
active
07109520
ABSTRACT:
An aspect of the present invention provides a heat sink has a side with a pattern that extends at least partially through a thickness of the heat sink. The heat sink also has a thickness no greater than 9 mm. In another embodiment, a heat sink has a side with a pattern that extends at least partially through a thickness of the heat sink. The heat sink also has a ratio of area:thickness, as seen from a plan view, of at least 500:1 when the area and thickness are expressed in units of mm2and mm, respectively.
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Wang Jian
Yu Gang
Baumeister B. William
E. I. du Pont de Nemours and Company
Farahani Dana
Lamming John H.
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