Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2005-08-23
2005-08-23
Turner, Archene (Department: 1775)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C428S307700, C428S312200, C428S408000, C428S469000, C428S472000
Reexamination Certificate
active
06933531
ABSTRACT:
Graphite is placed in a case, and the case is set in a furnace. The interior of the furnace is subjected to sintering to produce a porous sintered member of graphite. After that, the case with the porous sintered member therein is taken out of the furnace, and is set in a recess of a press machine. Subsequently, molten metal of metal is poured into the case, and then a punch is inserted into the recess to forcibly press the molten metal in the case downwardly. Open pores of the porous sintered member are infiltrated with the molten metal of the metal by the pressing treatment with the punch.
REFERENCES:
patent: 4333986 (1982-06-01), Tsuji et al.
patent: 4425315 (1984-01-01), Tsuji et al.
patent: 5008737 (1991-04-01), Burnham et al.
patent: 5045972 (1991-09-01), Supan et al.
patent: 5120495 (1992-06-01), Supan et al.
patent: 5296310 (1994-03-01), Kibler et al.
patent: H1358 (1994-09-01), Ferrando et al.
patent: 5347426 (1994-09-01), Dermarkar et al.
patent: 5410796 (1995-05-01), Weeks, Jr.
patent: 5455738 (1995-10-01), Montesano et al.
patent: 5580658 (1996-12-01), Maruyama et al.
patent: 5783316 (1998-07-01), Colella et al.
patent: 5786075 (1998-07-01), Mishuku et al.
patent: 5848349 (1998-12-01), Newkirk et al.
patent: 5944097 (1999-08-01), Gungor et al.
patent: 6031285 (2000-02-01), Nishibayashi
patent: 6037032 (2000-03-01), Klett et al.
patent: 6110577 (2000-08-01), Ishikawa et al.
patent: 6143142 (2000-11-01), Shi et al.
patent: 6171691 (2001-01-01), Nishibayashi
patent: 6238454 (2001-05-01), Polese et al.
patent: 6270848 (2001-08-01), Nishibayashi
patent: 6569524 (2003-05-01), Kawai et al.
patent: 1201256 (1998-12-01), None
patent: 0 504 532 (1992-09-01), None
patent: 0 673 900 (1995-09-01), None
patent: 48-84008 (1973-11-01), None
patent: 49-116109 (1974-11-01), None
patent: 51-24525 (1976-02-01), None
patent: 56054046 (1981-05-01), None
patent: 56161647 (1981-12-01), None
patent: 59-228742 (1984-12-01), None
patent: 62-207832 (1987-09-01), None
patent: 01149933 (1989-06-01), None
patent: 01254369 (1989-10-01), None
patent: 03295879 (1991-12-01), None
patent: 04083784 (1992-03-01), None
patent: 4-259305 (1992-09-01), None
patent: 4-329845 (1992-11-01), None
patent: 4329845 (1992-11-01), None
patent: 05337630 (1993-12-01), None
patent: 06263571 (1994-09-01), None
patent: 07011360 (1995-01-01), None
patent: 8-37258 (1996-02-01), None
patent: 08-279569 (1996-10-01), None
patent: 09175877 (1997-07-01), None
patent: 10168502 (1998-06-01), None
patent: 11-67991 (1999-03-01), None
patent: 11061292 (1999-03-01), None
patent: 11-140559 (1999-05-01), None
patent: 11140560 (1999-05-01), None
patent: 2000095586 (2000-04-01), None
patent: 2000203973 (2000-07-01), None
patent: 2001058255 (2001-03-01), None
patent: 2001-122672 (2001-05-01), None
patent: 2002-080280 (2002-03-01), None
Wei et al “Improvement of wear resistance of pulsed laser deposited diamond-like carbon films through incorporation of metals” Materials Science and Engineering B53, (1998) 262-266.
Klages et al “Microstructure and Physical Properties of Metal-Containing Hydrogenated Carbon Films” Material Science Forum vols. 52 & 53 (1989) pp 609-644.
U.S. patent application Ser. No. 10/279,959, Ishikawa et al., filed Oct. 24, 2002.
U.S. patent application Ser. No. 10/245,999, Ishikawa et al., filed Sep. 18, 2002.
Ishikawa Shuhei
Mitsui Tsutomu
Nakayama Nobuaki
Suzuki Ken
Takeuchi Hiroyuki
Burr & Brown
NGK Insulators Ltd.
Turner Archene
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