Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2005-08-09
2005-08-09
Turner, Archene (Department: 1775)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C428S408000, C428S469000, C428S446000, C428S698000
Reexamination Certificate
active
06927421
ABSTRACT:
A mass of graphite is placed into a case, and the case is put into a furnace (step S301). The space in the furnace is heated to produce a porous sintered body of graphite (step S302). Thereafter, the case with the porous sintered body contained therein is removed from the furnace, and put into a cavity in a press (step S303). Then, a molten mass of a metal is poured into the case (step S304), and a punch is inserted into the cavity to press the molten metal into the porous sintered body in the case (step S305).
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U.S. Appl. No. 09/913,353, filed Aug. 13, 2001, Ishikawa et al.
Ishikawa Shuhei
Mitsui Tsutomu
Nakayama Nobuaki
Suzuki Ken
Takeuchi Hiroyuki
NGK Insulators Ltd.
Turner Archene
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