Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2004-06-29
2010-06-29
Trinh, Hoa B (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S718000, C257S720000, C257SE33075
Reexamination Certificate
active
07745927
ABSTRACT:
An integrated circuit die includes a substrate having a front surface and a back surface, wherein the substrate front surface has electrical circuits formed thereon, and the substrate back surface has a plurality of metal layers formed thereon. The plurality of metal layers comprises at least one layer having a thickness of greater than about ten micrometers. The outermost metal layer may be mechanically and thermally bonded to a package using a die attach layer comprising a thermally conductive reflowable material. The invention advantageously facilitates the dissipation of heat from the integrated circuit die.
REFERENCES:
patent: 4080722 (1978-03-01), Klatskin et al.
patent: 4451972 (1984-06-01), Batinovich
patent: 4722130 (1988-02-01), Kimura et al.
patent: 4866505 (1989-09-01), Roberts et al.
patent: 5027997 (1991-07-01), Bendik et al.
patent: 5635010 (1997-06-01), Pepe et al.
patent: 5773362 (1998-06-01), Tonti et al.
patent: 6350634 (2002-02-01), Ma
Ryan Vivian
Shanaman, III Richard Handly
Agere Systems Inc.
Ryan & Mason & Lewis, LLP
Trinh Hoa B
LandOfFree
Heat sink formed of multiple metal layers on backside of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Heat sink formed of multiple metal layers on backside of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heat sink formed of multiple metal layers on backside of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4177792