Patent
1977-03-18
1978-12-12
James, Andrew J.
357 66, 357 81, H01L 2348, H01L 2940, H01L 2504
Patent
active
041298810
ABSTRACT:
An improved construction for a two or three terminal power semiconductive device provides efficient thermal and electrical conduction between the heat-generating semiconductive wafer and the associated terminal electrodes with the use of a permanent, flowable thin layer of liquid metal therebetween. The liquid metal is carried in annular reservoirs within the outer surfaces of the terminal electrodes confronting the planar surfaces of the wafer, and serve to conduct the heat from the wafer to a hollow heat-dissipating well within the terminal electrodes. The wall of the well is made porous or is otherwise configured or reinforced to effectively increase the surface area thereof to aid in heat dissipation. If desired, an auxiliary seal-bearing groove is disposed concentric with and radially inwardly of the reservoir on at least one of the terminal electrodes, such groove bearing an O-ring or similar seal which bears against the confronting surface of the wafer to confine the flow of the liquid metal layer.
REFERENCES:
patent: 3226608 (1965-12-01), Coffin
patent: 3248615 (1966-04-01), Weisshaar
patent: 3475660 (1969-10-01), Coblenz
patent: 3852803 (1974-12-01), Walmet et al.
patent: 3858096 (1974-12-01), Kuhrt et al.
Kafunek Pavel
Kovar Jiri
Kratina Jindrich
Pellant Michal
Pokorny Oldrich
CKD PRAHA, Oborovy podnik
James Andrew J.
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