Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2004-10-26
2009-02-17
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S208000, C117S213000, C117S217000, C117S900000
Reexamination Certificate
active
07491270
ABSTRACT:
A heat shielding member20that thermally shields the periphery of a single crystal16used in a Czochralski single crystal pulling device that pulls the single crystal16from a melt15that is collected in a crucible10is disclosed. The heat shielding member20is provided with an approximately cylindrical main body portion21arranged so as to surround the single crystal16,with a lower end portion thereof extending to the vicinity of the melt15, and an approximately annular bottom plate portion22that extends in the diameter direction from the bottom end portion of the main body portion21to cover the melt. The bottom plate portion22is attached to the main body portion21in the state of being severed in the circumferential direction at at least one location. With this constitution it is possible to provide a heat shielding member with superior durability and a single crystal pulling device that employs the heat shielding member.
REFERENCES:
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Office Action issued on Jun. 24, 2008, on the counterpart Japanese Patent Application No. 2003-123193, and its English translation.
Kuragaki Syunji
Sasaki Hitoshi
Hiteshew Felisa C
Kolisch Hartwell PC
Sumco Corporation
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