Heat-resistant thin film photoelectric converter

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136259, 357 30, 357 59, 357 71, H01L 3106

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047658452

ABSTRACT:
A heat-resistant thin film photoelectric converter, comprising a semiconductor layer, a front transparent electrode, a rear metal electrode, and a diffusion-blocking layer, said diffusion-blocking layer being provided between the semiconductor layer and the rear metal electrode and being a layer of metal silicide having a thickness of 5 .ANG. to 200 .ANG..
The converter of the present invention can avoid the reduction in the efficiency due to the diffusion of metal or metallic compound from the electrode into the semiconductor.

REFERENCES:
patent: 3965279 (1976-06-01), Levinstein et al.
patent: 3968272 (1976-07-01), Anand
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4278704 (1981-07-01), Williams
patent: 4532371 (1985-07-01), Hanak et al.
Garbarino et al., Contact Barrier Metallurgy for Mosfet Gate, IBM Technical Disclosure Bulletin, vol. 19, No. 9, Feb. 1977, p. 3382.
Herd et al., Formation and Crystallization of Amorphous Silicides at the Interface Between Thin Metal and Amorphous Silican Films, Thin Solid Films, vol. 104, No. 1/2, (1983), pp. 197-206.
Tsai, Contact Metallurgical Process With Laser Beam Annealing, IBM Technical Disclosure Bulletin, vol. 25, No. 2, Jul. 1982 (pp. 601-602).

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