Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-11-14
2006-11-14
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S203000, C257S343000, C257S377000, C257S503000, C257S751000, C257S759000, C257S760000, C257S774000
Reexamination Certificate
active
07135774
ABSTRACT:
An aspect of the present invention provides an ohmic electrode that includes an SiC (silicon carbide) substrate, an impurity region selectively formed in a surface of the SiC substrate, an insulating film formed on the surface of the SiC substrate, a contact hole opened through the insulating film, to expose a surface of the impurity region, a conductive thermal reaction layer formed in the contact hole in contact with the impurity region, a conductive plug formed to fill the contact hole, an metal wiring formed on the insulating film and electrically coupled to the plug, and a diffusion preventive layer formed between the metal wiring and the plug to electrically couple the plug with the metal wiring, the diffusion preventive layer configured to prevent the diffusion of metal atoms from the metal wiring.
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McDermott Will & Emery LLP
Nissan Motor Co,. Ltd.
Soward Ida M.
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