Heat radiation structure of semiconductor device, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents

Reexamination Certificate

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Details

C257S706000, C257S707000, C257S704000, C257S730000, C438S122000, C438S125000

Reexamination Certificate

active

07579688

ABSTRACT:
The invention of the present application provides a heat radiation structure of a semiconductor device, and includes a substrate having, on a surface thereof, a first area on which the semiconductor device is mounted, and a second area which surrounds the first area. The semiconductor device has a first surface and a second surface opposite to the first surfaces, and is formed with a plurality of terminals provided on the first surface. The semiconductor device is mounted on the substrate in such a manner that the first surface is opposite to the surface of the substrate. A first heat radiating film is formed on the second area of the substrate, and a second heat radiating film is formed on the second surface of the semiconductor device, with the second heat radiating film being spaced apart from the first heat radiating film.

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