Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2008-05-13
2008-05-13
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE21665, C365S171000, C428S800000
Reexamination Certificate
active
10869315
ABSTRACT:
A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.
REFERENCES:
patent: 3607460 (1971-09-01), Lommel
patent: 3741823 (1973-06-01), Lommel
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5953248 (1999-09-01), Chen et al.
patent: 6146775 (2000-11-01), Fujita et al.
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6518588 (2003-02-01), Parkin et al.
patent: 6567299 (2003-05-01), Kunikiyo et al.
patent: 6603678 (2003-08-01), Nickel et al.
patent: 6653704 (2003-11-01), Gurney et al.
patent: 6714444 (2004-03-01), Huai et al.
patent: 6731479 (2004-05-01), Ooshima et al.
patent: 6784509 (2004-08-01), Yuasa et al.
patent: 7038939 (2006-05-01), Amano et al.
patent: 2002/0036877 (2002-03-01), Sakakima et al.
patent: 2002/0098974 (2002-07-01), Nickel et al.
patent: 2002/0191355 (2002-12-01), Hiramoto et al.
patent: 2003/0011947 (2003-01-01), Saito et al.
patent: 2003/0062981 (2003-04-01), Hosomi et al.
patent: 2003/0108721 (2003-06-01), Fullerton et al.
patent: 2003/0123282 (2003-07-01), Nickel et al.
patent: 2003/0152805 (2003-08-01), Bertero et al.
patent: 2003/0179071 (2003-09-01), Hiramoto et al.
patent: 2003/0198113 (2003-10-01), Abraham et al.
patent: 2004/0136231 (2004-07-01), Huai et al.
patent: 2004/0165428 (2004-08-01), Odagawa et al.
patent: 2005/0041335 (2005-02-01), Kikitsu et al.
patent: 2005/0098809 (2005-05-01), Katti
patent: 2005/0129984 (2005-06-01), Bertero et al.
patent: 2005/0170533 (2005-08-01), Lee et al.
patent: 2005/0237787 (2005-10-01), Huai et al.
Kouvel, J. S. “Unusual Nature of the Abrupt Magnetic Transition in FeRh and Its Pseudobinary Variants.” J. Appl. Phys. 37 (1966): 1257-1258.
Farrow, R. F. C. et al. “MnxPt1-x: A New Exchange Bias Material for Permalloy.” J. Appl. Phys. 81 (1997): 4986-4988.
Annaorazov, M. P. et al. “Anomalously High Entropy Change in FeRh Alloy.” J. Appl. Phys. 79 (1996): 1689-1695.
J.M. Daughton and A.V. Pohm, “Design of Curie Point Written Magnetoresistance Radom Access Memory Cells,” May 15, 2003, vol. 93, No. 10, Journal of Applied Physics.
Fullerton Eric Edward
Maat Stefan
Thiele Jan-Ulrich
Baumeister B. William
Hitachi Global Storage Technologies - Netherlands B.V.
Such Matthew W.
Zilka-Kotab, PC
LandOfFree
Heat assisted switching in an MRAM cell utilizing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Heat assisted switching in an MRAM cell utilizing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heat assisted switching in an MRAM cell utilizing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3922990