Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-08-28
2007-08-28
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C257S316000, C257S322000
Reexamination Certificate
active
10844525
ABSTRACT:
A hearing aid comprising a data memory includes a plurality of semiconductor memory cells. The semiconductor memory cell has a gate insulating film formed on a semiconductor substrate, on a well region provided in the semiconductor substrate, or on a semiconductor film deposited on an insulator; a single gate electrode formed on the gate insulating film; two memory functional units formed on both sidewalls of the single gate electrode; a channel formation region formed under the single gate electrode; and first diffusion regions disposed on both sides of the channel formation region. The semiconductor memory cell is constituted so as to change an amount of currents flowing from one of the first diffusion regions to the other first diffusion region according to an amount of charges retained in the memory functional unit or a polarization vector when a voltage is applied to the gate electrode.
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Iwata Hiroshi
Ogura Takayuki
Shibata Akihide
Dinh Son
Sharp Kabushiki Kaisha
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