Healing radiation defects in semiconductors

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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29585, 357 23, 357 29, 357 45, 357 91, 365104, H01L 21263

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active

042386942

ABSTRACT:
The rate at which radiation defects in semi-conductors are annealed is enhanced by various electronic mechanisms. These effects can be used to program device arrays in which all devices are initially damaged, then selected devices are activated by addressing them electrically through the individual device contacts.

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Lang et al., Phys. Rev. Lett., vol. 33, Aug. 19, 1974, pp. 489-492.
Baruch, J. Appl. Phys., vol. 32, No. 4, Apr. 1971, pp. 653-659.
Kimerling et al., Solid State Communications, vol. 16, pp. 171-174 (1975).

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