1978-06-12
1980-03-04
Clawson, Jr., Joseph E.
357 15, 357 20, H01L 2702
Patent
active
041919645
ABSTRACT:
A diffused resistor included in a Schottky device formed in a planar semiconductor material comprises a resistor diffusion formed in the surface of the material and a contact diffusion formed in the surface of the material, the configuration of the contact diffusion being essentially coincident with the shape of the resistor at the location at which ohmic contact to the resistor diffusion is made.
REFERENCES:
patent: 3615932 (1971-10-01), Makimoto et al.
patent: 3683306 (1972-08-01), Bulthuis et al.
patent: 3860465 (1975-01-01), Matzner
patent: 3879236 (1975-04-01), Langdon
Clawson Jr. Joseph E.
Colwell Robert C.
Fairchild Camera & Instrument Corp.
MacPherson Alan H.
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