Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Mesa or stacked emitter
Reexamination Certificate
2011-01-25
2011-01-25
Fahmy, Wael M (Department: 2891)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Mesa or stacked emitter
C438S317000, C438S320000, C438S364000, C257SE21371
Reexamination Certificate
active
07875523
ABSTRACT:
A heterojunction bipolar transistor is formed with an emitter electrode that comprises an emitter epitaxy underlying an emitter metal cap and that has horizontal dimensions that are substantially equal to the emitter metal cap.
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Fahmy Wael M
HRL Laboratories LLC
Ladas & Parry
Yang Minchul
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