Amplifiers – With semiconductor amplifying device – Including temperature compensation means
Patent
1996-08-30
1997-05-13
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including temperature compensation means
330295, 330296, 330307, H03F 368, H03F 130
Patent
active
056296487
ABSTRACT:
An improved heterojunction bipolar transistor power amplifier circuit providing an efficient and linear amplifier comprising: a first heterojunction bipolar transistor (HBT) having a base emitter voltage; a power supply; a power supply resistor connected to the power supply causing DC current to flow through the first HBT which develops a resultant voltage equal to the base emitter voltage of the first HBT; at least two manifold base resistors; at least two output HBTs, each of which receive the resultant voltage through its corresponding manifold base resistor; a RF signal input; at least two segmented capacitors, each coupled in parallel to receive the RF signal input and to the input of each corresponding output HBT; the segmented capacitors having a common input connected to the RF signal input and having individual outputs that are DC isolated from each other and which are connected to each output HBT; a RF output signal obtained from the parallel connection of the output HBTs; and provided that each HBT is connected to ground.
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Mullins James B.
RF Micro Devices, Inc.
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