Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-10-23
2007-10-23
Deo, Duy-Vu N (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000, C438S693000
Reexamination Certificate
active
11264893
ABSTRACT:
A method for reducing the topography from CMP of metal layers during the semiconductor manufacturing process is described. Small amounts of solute are introduced into the conductive metal layer before polishing, resulting in a material with electrical conductivity and electromigration properties that are very similar or superior to that of the pure metal, while having hardness that is more closely matched to that of the surrounding oxide dielectric layers. This may allow for better control of the CMP process, with less dishing and oxide erosion a result. A secondary benefit of this invention may be the elimination of superficial damage and embedded particles in the conductive layers caused by the abrasive particles in the slurries.
REFERENCES:
patent: 3779714 (1973-12-01), Nadkarni et al.
patent: 4749548 (1988-06-01), Akutsu et al.
patent: 4752334 (1988-06-01), Nadkarni et al.
patent: 6022808 (2000-02-01), Nogami et al.
patent: 6117770 (2000-09-01), Pramanick et al.
patent: 6174812 (2001-01-01), Hsiung et al.
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6352920 (2002-03-01), Shimomura
patent: 6358840 (2002-03-01), Wang et al.
patent: 6368967 (2002-04-01), Besser
patent: 6387806 (2002-05-01), Wang et al.
patent: 6432819 (2002-08-01), Pavate et al.
patent: 6440849 (2002-08-01), Merchant et al.
patent: 2001/0034126 (2001-10-01), Ding et al.
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