Hardened photoresist master image mask process

Details Hardened photoresist master image mask process Hardened photoresist master image mask process

1978-04-28

1980-05-06

Powell, William A.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

148187, 156643, 156657, 1566611, 427 431, 427265, 427340, 427385R, C03C 1500, C03C 2706

Patent

active

042018005

ABSTRACT:
An improved mask fabrication process is disclosed which may be broadly applied to ion-implantation, reactive plasma etching, or the etching of semiconductor structures. The process is based upon the deposition onto an oxide coated or bare semiconductor surface, of a first photoresist layer having formed therein a plurality of windows and which is hardened by a wet chemical technique so as to have an increased resistance to dissolution in solvents. A second photoresist layer is deposited over the surface and windows of the first layer and a subplurality of windows are formed therein over selected windows in the first photoresist layer so as to selectively block a portion of the plurality of windows in the first layer. This composite mask invention may then be employed to carry out an ion-implantation step, wet etching step or reactive plasma etching step on the oxide or semiconductor surface exposed through composite windows. The second layer of photoresist may then be removed and a substitute photoresist layer may be deposited on the surface and windows of the first, hardened photoresist layer and a different subplurality of windows in the substitute layer may be selectively formed over selected windows in the hardened photoresist layer, thereby selectively blocking a different combination of windows in the first, hardened layer.

REFERENCES:
patent: 4068018 (1978-01-01), Hashimoto et al.
patent: 4088490 (1978-05-01), Duke et al.

Affiliated with

Also associated with

Rating

Hardened photoresist master image mask process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hardened photoresist master image mask process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hardened photoresist master image mask process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1005267