Hard material-coated wafer, method of making same, polishing app

Details Hard material-coated wafer, method of making same, polishing app Hard material-coated wafer, method of making same, polishing app

1997-06-13

1999-01-05

Turner, Archene

Stock material or miscellaneous articles

Structurally defined web or sheet

Including components having same physical characteristic in...

428408, 428704, 428446, 428698, 428141, 428426, 427532, 427560, 427255, 4272552, 427249, H01L 21461, B24B 100

Patent

active

058559981

ABSTRACT:
A hard material-coated wafer that having a distortable substrate and a hard material film deposited thereon by a CVD method is provided. The substrate is substantially flat while in a free-standing state. However, deposition of the hard material film having a Vickers hardness of more than Hv3000 on the substrate causes the substrate to distort into a generally convex-shape. Specifically, the wafer is distorted to the film side with a distortion height H of -150 .mu.m to -2 .mu.m. The resulting wafer can have a total thickness that ranges from 0.1 mm to 2.1 mm; and a diameter that is bigger than 25 mm. Moreover, more than 50% of the film can be polished to a roughness less than Rmax 50 nm and Ra 20 nm.

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Wolter et al., "Textured Growth of Diamond on Silicon Via in situ Carburization and Bias-Enhanced Nucleation", Applied Physics Letters, vol. 62, No. 11, 1993, Mar. 15, 1993, pp. 1215-1217.
Tenth International Symposium Proceedings, Oct.-Nov. 1993.

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