Hard layer formed by incorporating nitrogen into Mo or W metal a

Details Hard layer formed by incorporating nitrogen into Mo or W metal a Hard layer formed by incorporating nitrogen into Mo or W metal a

1984-12-06

1987-08-04

Swisher, Nancy A.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

20419231, 428698, C23C 1500

Patent

active

046845364

ABSTRACT:
This hard layer is obtained by incorporating a maximum of 2 weight % of nitrogen in Mo or W by the technique of cathode sputtering in a nitrogen reactive medium, the temperature at which the nitrogen incorporation occurs which is in the order of 300.degree. C. preventing the nitrogen to precipitate at the grains-joints during cooling, so that the layer only comports a cubic centered Mo or W phase, thus preserving its own ductility to the metal.

REFERENCES:
patent: 4116791 (1978-09-01), Zega
patent: 4497878 (1985-02-01), Natano et al.

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