Hard carbon nitride and method for preparing same

Stock material or miscellaneous articles – Self-sustaining carbon mass or layer with impregnant or...

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20419215, 20419216, 20419222, 423384, 428446, 428469, 428698, 428699, 428700, 428704, B32B 900, B32B 904, C23C 1406

Patent

active

051106795

ABSTRACT:
Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

REFERENCES:
patent: 1123584 (1915-01-01), Peacock
patent: 4774130 (1988-09-01), Endo et al.

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