Hall sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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Details

C257S108000, C257S414000, C257S422000, C257S423000, C257S424000, C257S425000, C257S426000, C257S427000, C257S659000

Reexamination Certificate

active

07339245

ABSTRACT:
A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor substrate also include a second zone having a second conduction type. A space-charge zone in the semiconductor substrate separates the first zone and the second zone, first contacts supply a control current to the first zone, and second contacts supply a compensation current to the second zone.

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Translation of International Preliminary Examination Report for Application No. PCT/EP2003/009043.
Mani, R.G. et al “Temperature-insensitive Offset Reduction in a Hall Effect Device” Applied Physics Letter, vol. 64, No. 23, Jun. 1994 pp. 3121-3123, XP000449593.
P.J.A. Munter “A Low Offset Spinning-current Hall Plate” Sensors & Actuators A, A22 (1990), pp. 743-746.

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