Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1990-10-31
1991-08-20
Prenty, Mark
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 41, 357 55, 357 60, 307309, H01L 2722, H01L 2906, H01L 2904, H03K 1790
Patent
active
050418912
ABSTRACT:
A Hall element and an amplifier for amplifying an output generated from the Hall element are formed in a GaAs substrate. The Hall element has a current path extending at an angle of 45.degree..+-.10.degree. to a cleavage direction of a GaAs wafer from which the GaAs substrate is formed. The amplifier comprises amplifying FETs for receiving the output generated from the Hall element, each of which has a current path extending in the direction of a crystal axis <011>.+-.10.degree.. The amplifier further comprises other semiconductor elements such as FETs and resistors, each of which has a current path extending in parallel with a dicing line, that is, extending at an angle of .+-.45.degree. to a cleavage direction of a GaAs wafer from which the GaAs substrate is formed.
REFERENCES:
Keijiro Itakura et al., "Design and Fabrication of GaAs Hall IC with SCFL Schmitt Trigger", Electronics & Communications in Japan, Part 2, vol. 71, No. 12, pp. 20-26, 1988.
Kabushiki Kaisha Toshiba
Prenty Mark
LandOfFree
Hall IC formed in GaAs substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hall IC formed in GaAs substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hall IC formed in GaAs substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1011757