Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1991-10-28
1992-12-22
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
338 32R, 338 32H, 324252, 32420721, 257421, 257425, 257424, H01L 2722
Patent
active
051737582
ABSTRACT:
A Hall generator includes a substrate body of single crystalline semi-insulating gallium arsenide having a surface. A thin layer, no greater than about 5 micrometers in thickness, of single crystalline indium arsenide is on the surface of the body and is in the form of four arms joined at a common point to form a cross. A separate metal contact is on each of the arms at the free end thereof. An accumulation layer is adjacent the outer surface of the indium arsenide layer and extends along the entire surface of the indium arsenide layer between the contacts. The accumulation layer is effective to provide a magnetic sensitivity and range of operating temperatures as if the indium arsenide layer was much thinner and had a much higher electron density and electron mobility. Electrical devices, such as field effect transistors, may be formed in the body and the surface and electrically connected to the contacts of the Hall generator in a desired circuit.
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General Motors Corporation
Mintel William
Wallace Robert J.
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