Hall element for detecting a magnetic field perpendicular to a s

Details Hall element for detecting a magnetic field perpendicular to a s Hall element for detecting a magnetic field perpendicular to a s

1995-02-07

1996-08-20

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

257427, 257515, H01L 2982

Patent

active

055481515

ABSTRACT:
In a Hall element, a semiconductor layer is surrounded by a first trench filled with an insulator. A first current supply portion of an n+-type semiconductor is disposed adjacent the semiconductor layer and the first trench. Second current supply portions are also disposed adjacent the semiconductor layer and the first trench and symmetrical with respect to the first current supply portion. Sensor portions of an n+-type semiconductor are disposed adjacent the semiconductor layer and the first trench at about the center between the first and second current supply portions, respectively. A magnetic flux perpendicular to the upper surface of the semiconductor layer can be detected by the foregoing arrangement.

REFERENCES:
patent: 4782375 (1988-11-01), Popovic
patent: 4987467 (1991-01-01), Popovic
Wolfrum, "KSY 14--the Ultra-flat, Versatile Hall Sensor," Siemens Components XXV, Oct. 25, 1990, No. 5, pp. 167-172.

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