Hall element device with depletion region protection barrier

Details Hall element device with depletion region protection barrier Hall element device with depletion region protection barrier

1986-04-25

1990-05-29

Hille, Rolf

357 48, H01L 2722

Patent

active

049299930

ABSTRACT:
An integrated circuit Hall element is disclosed. At least two current connection contacts and two sensor connection contacts are formed on the surface of the semiconductor body incorporating the Hall element. The active zone of the Hall element is located below the surface. A depletion region, depleted of mobile charge, is located between the surface and the active zone to provide isolation for the active zone, so that the Hall device output is linear and independent of changes in external temperature. A feedback circuit is provided to control the thickness of the depletion region.

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patent: 4673964 (1987-06-01), Popovic et al.
Popovic, "Vertical Hall-Effect Device", IEEE, vol. EDL 5, No. 9, pp. 357-358, Sep. 1984.
Poole & Walker, "Hall Effect Probes . . . ", IEEE, vol. MAG-17, No. 5, pp. 2129-2132, Sep. 1981.

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