Hall element and method of manufacturing same

Details Hall element and method of manufacturing same Hall element and method of manufacturing same

1975-07-11

1977-05-03

Albritton, C. L.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

29576R, H01L 4304

Patent

active

040217671

ABSTRACT:
A cleaved surface of a crystal is used as a substrate for evaporation, and a high mobility semiconductor is evaporated to a thickness of 0.5 to 1.5 .mu.m to form a deposited thin semiconductor film, on which a first magnetizable member having a high magnetic permeability is applied with an adhesive. Subsequently the substrate is removed, and an electrode is formed on the exposed surface of the evaporated thin film, and a second magnetizable member is applied thereon with an adhesive. Where a special humidity resistance is required, a reinforcing layer of an electrically insulating and moisture-impervious inorganic material is formed directly on the evaporated thin semiconductor film before the first magnetizable member is applied.

REFERENCES:
patent: 3265959 (1966-08-01), Wiehl et al.
patent: 3373391 (1968-03-01), Bohm et al.
patent: 3845444 (1974-10-01), Masuda et al.

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