Hall element and magnetic sensor

Details Hall element and magnetic sensor Hall element and magnetic sensor

2007-03-30

2011-12-27

Tang, Minh N (Department: 2858)

Electricity: measuring and testing

Magnetic

Displacement

C324S251000

Reexamination Certificate

active

08085035

ABSTRACT:
A Hall element is provided which has a high sensitivity and contributes to an improvement in S/N ratio per current by using a low-concentration n-well within a suitable range. The Hall element includes a p-type semiconductor substrate layer of p-type silicon, and an n-type impurity region located in a surface of the p-type semiconductor substrate layer, the n-type impurity region functioning as a magnetic sensing part. A p-type impurity region is located in a surface of the n-type impurity region, and n-type regions are located laterally of the p-type impurity region. A p-type substrate region having a resistivity equal to that of the p-type semiconductor substrate layer is located to extend around the n-type impurity region. An impurity concentration N in the n-type impurity region functioning as the magnetic sensing part is preferably from 1×1016to 3×1016(atoms/cm3) and a distribution depth of the impurity concentration is preferably from 3.0 μm to 5.0 μm.

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