Hall effect-switching device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307290, 307303, 307309, 357 27, H01L 4306, H03K 1790

Patent

active

040114694

ABSTRACT:
In an integrated semiconductor Hall-effect switching device, the Hall element is effectively prebiased by unequal base-emitter junction internal voltage drops resulting from unequal base-emitter areas in the transistors connected to the Hall element.

REFERENCES:
patent: 3449517 (1969-06-01), Turja
patent: 3596114 (1971-07-01), Maupin

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