Hall-effect sensor incorporated in a CMOS integrated circuit

Details Hall-effect sensor incorporated in a CMOS integrated circuit Hall-effect sensor incorporated in a CMOS integrated circuit

1994-02-02

1997-05-06

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

257421, 3242072, 324117H, H01L 2982, H01L 4300

Patent

active

056273983

ABSTRACT:
The Hall-effect sensor HS' of the invention incorporated in a CMOS integrated circuit IC' is formed with a well 2' as the sensor active layer on a substrate 1'. Heavily doped regions 31', . . . , 34', in the well 2' are connected with sensor metal contacts 41', . . . , 44'. The upper plane S' of the substrate 1' is covered by a field oxide layer 5' the thickness thereof being between 0.8 .mu.m. and 1.0 .mu.m. Over the layer 5' in the region 50' surrounding the sensor contacts 41', . . . , 44', a polysilicon layer 6' is provided to block the disturbing influence of ions migrating in the field oxide layer 5'.

REFERENCES:
patent: 4660065 (1987-04-01), Carvajal et al.
patent: 4742296 (1988-05-01), Petr et al.
patent: 4908527 (1990-03-01), Van Antwerp
patent: 4929993 (1990-05-01), Popovic
"Improved Hall Devices Find New Uses," 8032 Electronics Week, Apr. 29, 19 vol. 58, No. 17, New York, pp. 59-61.
"Improved Hall Devices Find New Uses", Electronics Week, Apr. 29, 1985, pp. 59-61.

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