Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Patent
1993-05-24
1995-08-15
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
257 14, 257 15, 257190, 257421, 257426, 324260, 324252, 338 32H, H01L 2722, H01L 4300
Patent
active
054422213
ABSTRACT:
A Hall effect sensor of two-dimensional electron gas type comprising, on an insulating substrate, a quantum well structure, a carrier injection layer adjacent to the quantum well structure, of thickness less than 250 .ANG. and having an density per unit area of donors integrated over the whole thickness of the carrier injection layer less than 5.times.10.sup.12 cm.sup.-2, an insulating burial layer deposited on the carrier injection layer, having a conduction band with an energy level greater than the Fermi energy of the sensor and a thickness greater than 200 .ANG.. Applicable to the field of electricity meters and current sensors.
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Mosser Vincent
Robert Jean-Louis
Asman Sanford J.
Crane Sara W.
Guay John
Schlumberger Industries S.A.
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