Hall effect modulation of resistor values

Details Hall effect modulation of resistor values Hall effect modulation of resistor values

1996-01-22

1998-06-09

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

257424, 257427, 338 32H, 365158, 365170, H01L 2982, H01L 4304, H01L 4310, H01L 4306

Patent

active

057639280

ABSTRACT:
A semiconductor structure is disclosed in which two regions of semiconductor material positioned adjacent to each other have different electron mobilities. By application of a magnetic field to the device, a Hall voltage is created across the boundary region between the regions of semiconductor material to modify their resistance. By detecting the change in resistance, the device can function as a memory cell, a programmable logic device, a head for hard disk drives, a measurement tool for measuring magnetic fields, or other apparatus.

REFERENCES:
patent: 3617975 (1971-11-01), Wieder
patent: 5295097 (1994-03-01), Lienau
patent: 5329480 (1994-07-01), Wu et al.
IBM TDB vol. 31 No. 7 Dec. 1988 "Magnetic Current Switch" pp. 395-396.

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