Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Patent
1994-06-01
1996-01-30
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
257422, 257427, 338 32H, 365158, 365170, H01L 2982, H01L 4304, H01L 4308, G11C 1118
Patent
active
054882508
ABSTRACT:
A semiconductor structure is disclosed in which two regions of semiconductor material positioned adjacent to each other have different electron mobilities. By application of a magnetic field to the device, a Hall voltage is created across the boundary region between the regions of semiconductor material to modify their resistance. By detecting the change in resistance, the device can function as a memory cell, a programmable logic device, a head for hard disk drives, a measurement tool for measuring magnetic fields, or other apparatus.
REFERENCES:
patent: 3617975 (1969-10-01), Wieder
patent: 5295097 (1994-03-01), Lienau
patent: 5329480 (1994-07-01), Wu et al.
IBM TDB vol. 31 No. 7 Dec. 1988 p. 395 "Magnetic Current Switch".
Hennig Falke
Jackson Jerome
LandOfFree
Hall effect modulation of resistor values does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hall effect modulation of resistor values, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hall effect modulation of resistor values will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-158067